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| Artikel-Nr.:
3794E-2296326 Herst.-Nr.:
FDT4N50NZU EAN/GTIN:
k.A. |
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| Channel-Typ = N
Dauer-Drainstrom max. = 2 A
Drain-Source-Spannung max. = 500 V
Serie = UniFET II
Montage-Typ = SMD
Pinanzahl = 3
Drain-Source-Widerstand max. = 3 Ω
Gate-Schwellenspannung max. = 5.5V
Anzahl der Elemente pro Chip = 1
The ON Semiconductor UniFET II high voltage MOSFET based on advanced planar stripe and DMOS technology. This advanced MOSFET has the smallest on state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction, flat panel display, TV power, ATX and electronic lamp ballasts.Ultra low gate charge 100% avalanche tested Pb−free Halogen free RoHS compliant Weitere Informationen: | | Channel-Typ: | N | Dauer-Drainstrom max.: | 2 A | Drain-Source-Spannung max.: | 500 V | Serie: | UniFET II | Montage-Typ: | SMD | Pinanzahl: | 3 | Drain-Source-Widerstand max.: | 3 Ω | Gate-Schwellenspannung max.: | 5.5V | Anzahl der Elemente pro Chip: | 1 |
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| Weitere Suchbegriffe: mosfet 2a, 2296326, Halbleiter, Diskrete Halbleiter, onsemi, FDT4N50NZU, Semiconductors, Discrete Semiconductors, MOSFETs |
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