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| Artikel-Nr.:
3794E-2296460 Herst.-Nr.:
NTH4L045N065SC1 EAN/GTIN:
k.A. |
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| Channel-Typ = N
Dauer-Drainstrom max. = 55 A
Drain-Source-Spannung max. = 650 V
Serie = SiC Power
Montage-Typ = THT
Pinanzahl = 4
Drain-Source-Widerstand max. = 0,05 Ω
Gate-Schwellenspannung max. = 4.3V
Anzahl der Elemente pro Chip = 1
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.Highest efficiency Faster operation frequency Increased power density Reduced EMI Reduced system size Weitere Informationen: | | Channel-Typ: | N | Dauer-Drainstrom max.: | 55 A | Drain-Source-Spannung max.: | 650 V | Serie: | SiC Power | Montage-Typ: | THT | Pinanzahl: | 4 | Drain-Source-Widerstand max.: | 0,05 Ω | Gate-Schwellenspannung max.: | 4.3V | Anzahl der Elemente pro Chip: | 1 |
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| Weitere Suchbegriffe: 2296460, Halbleiter, Diskrete Halbleiter, onsemi, NTH4L045N065SC1, Semiconductors, Discrete Semiconductors, MOSFETs |
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