Littelfuse IXGT32N170 IGBT TO-268S 1700 V

Littelfuse IXGT32N170 IGBT TO-268S 1700 V

Disc IGBT NPT-Hi Voltage TO-268AA

Technische Daten:
Gehäuseart (Halbleiter): TO-268S · Kollektor-Ermitter-Sperrspannung U(CES): 1700 V · VCE Sättigung (max.): 3.3 V · Weitere technische Daten: Package Type: TO-268S
VCES - Collector-Emitter Voltage (V): 1700 V
Collector Current @ 25 ℃ (A): 75 A
VCE(sat) - Collector-Emitter Saturation Voltage (V): 3.3 V
Fall Time [Inductive Load] (ns): 250 ns
Configuration: Single
Thermal resistance [junction-case] [IGBT] (K/W): 0.35 K/W
Collector Current @ 90 ℃ (A): 35 A
Turn-off Energy @ 125 ℃ (mJ): 14 mJ