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| Artikel-Nr.:
3924-2966596-9H Herst.-Nr.:
IXFN30N120P EAN/GTIN:
k.A. |
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| Littelfuse IXFN30N120P MOSFET Single 890 W SOT-227
DiscMSFT N-CH HiPerFET-PolaSOT-227B(mini
Technische Daten:
Ausführung (Transistoren): Single · Gehäuseart (Halbleiter): SOT-227 · I(d): 30 A · Leistung (max) P(TOT): 890 W · U(DSS): 1200 V · Weitere technische Daten: Package Type: SOT-227
Configuration: Single
Thermal resistance [junction-case] (K/W): 0.14 K/W
Drain-Source Voltage (V): 1200 V
Maximum On-Resistance @ 25 ℃ (Ohm): 0.35 Ω
Continuous Drain Current @ 25 ℃ (A): 30 A
Gate Charge (nC): 310 nC
Input Capacitance, CISS (pF): 19000 pF
Power Dissipation (W): 890 W
Maximum Reverse Recovery (ns): 300 ns
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| Weitere Suchbegriffe: feldeffekttransistor, Littelfuse, IXFN30N120P, FET, Feldeffekt-transistor, fieldeffect-transistor, unipolar transistor |
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