onsemi FCMT180N65S3 N-Kanal, SMD MOSFET 650 V / 17 A 139 W, 4-Pin Power88

Channel-Typ = N
Dauer-Drainstrom max. = 17 A
Drain-Source-Spannung max. = 650 V
Gehäusegröße = Power88
Montage-Typ = SMD
Pinanzahl = 4
Drain-Source-Widerstand max. = 180 mΩ
Channel-Modus = Enhancement
Gate-Schwellenspannung max. = 4.5V
Gate-Schwellenspannung min. = 2.5V
Verlustleistung max. = 139 W
Transistor-Konfiguration = Einfach
Gate-Source Spannung max. = ±30 V
Breite = 8mm
Höhe = 1.05mm

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.700 V @ TJ = 150 oC Leadless Ultra-thin SMD package Kelvin contact Ultra Low Gate Charge (Typ. Qg = 33 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 305 pF) Optimized Capacitance Typ. RDS(on) = 152 mΩ Moisture Sensitivity Level 1 guarantee Internal Gate Resistance: 0.5 Ω Benefits: Higher system reliability at low temperature operation High power density Low gate noise and switching loss Low switching loss Low switching loss Lower peak Vds and lower Vgs oscillation Applications: Computing Telecommunication Industrial End Products: Telecom / Server Adapter LED Lighting